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Phase change behavior in titanium-doped films
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/content/aip/journal/apl/98/23/10.1063/1.3597617
2011-06-10
2014-12-20

Abstract

The titanium-doped films were deposited on Si(100) substrates by comagnetron sputtering method. The titanium concentrations in those films were determined by x-ray photoelectron spectroscopy. The influence of Ti doping upon phase changecharacteristics of the samples has been investigated by x-ray diffraction and a temperature-regulable UVISEL™ typed spectroscopic ellipsometry. With the augmentation of Ti doping concentration, the crystalline temperatures of the films went up while annealing, and the face-centered-cubic phase of them had high thermal stability because of the bond making between Ti and Te elements partly.

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Scitation: Phase change behavior in titanium-doped Ge2Sb2Te5 films
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3597617
10.1063/1.3597617
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