1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures
Rent:
Rent this article for
USD
10.1063/1.3598399
/content/aip/journal/apl/98/23/10.1063/1.3598399
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3598399
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Relaxed (22 MLs GaN)/(4 MLs AlN) heterostructure (a), its layer projected DOS (b), and its variation of bond lengths along the [001] direction (c).

Image of FIG. 2.
FIG. 2.

Variation in electric field in the GaN layer with changing GaN layer thickness for two fixed AlN interlayer thicknesses of 4 (squares) and 6 (circles) MLs from LDA calculations. The lines are fits using Eq. (5).

Loading

Article metrics loading...

/content/aip/journal/apl/98/23/10.1063/1.3598399
2011-06-10
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3598399
10.1063/1.3598399
SEARCH_EXPAND_ITEM