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In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of on Si and Ge substrates
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10.1063/1.3598433
/content/aip/journal/apl/98/23/10.1063/1.3598433
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3598433

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic top view representation of the UHV setup, adapted for ALD. X-rays hit the sample at a variable incidence angle. Scattered x-rays are observed with a PSD and fluorescent x-rays are observed by a silicon drift detector. (b) Schematics of the GISAXS geometry. Incident x-rays have a wave vector . Due to scattering the wave vector changes to . The momentum transfer due to scattering is denoted as .

Image of FIG. 2.
FIG. 2.

(a) Evolution of the (9.0 keV) and (9.3 keV) intensity as measured during the first ALD cycles on RCA cleaned Si. The Hf XRF intensity is proportional to the number of Hf atoms deposited. (b) Evolution of the GISAXS signal as measured every 10 ALD cycles on RCA cleaned Si.

Image of FIG. 3.
FIG. 3.

Integrated fluorescence intensity measured during ALD on H-terminated Si and RCA cleaned Si [(a) and (b)] and on H-terminated Ge and [(c) and (d)]. (b) and (d) are a detail of (a) and (c), respectively, focusing on the first 20 cycles.

Image of FIG. 4.
FIG. 4.

Roughness evolution based on the integrated GISAXS pattern for ALD on (a) H-terminated Si and RCA cleaned Si and on (b) H-terminated Ge and .

Tables

Generic image for table
Table I.

Root-mean-square roughness resulting from post-deposition AFM-measurements.

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/content/aip/journal/apl/98/23/10.1063/1.3598433
2011-06-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3598433
10.1063/1.3598433
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