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Band alignment between GeTe and /metals for characterization of junctions in nonvolatile resistance change elements
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10.1063/1.3599057
/content/aip/journal/apl/98/23/10.1063/1.3599057
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3599057
/content/aip/journal/apl/98/23/10.1063/1.3599057
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/content/aip/journal/apl/98/23/10.1063/1.3599057
2011-06-08
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band alignment between GeTe and SiO2/metals for characterization of junctions in nonvolatile resistance change elements
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3599057
10.1063/1.3599057
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