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Theoretical analysis of carrier mobility in organic field-effect transistors
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FIG. 1.

Simulated potential profile from the OSC/dielectric interface to free surface in an OFET with 50 nm (a) and 500 nm (b) pentacene film, respectively. Here the gate dielectric is 50 nm and or with , , DOS is Gaussian-like with .

Image of FIG. 2.

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FIG. 2.

Simulated surface carrier density with respect to gate voltage [(a) and (b)] and [(c) and (d)] are the logarithmic plots to observe the variation in subthreshold region.

Image of FIG. 3.

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FIG. 3.

Calculated surface potentials (a) and areal organic film charge (b) vs gate voltage in an OFET with 50 nm pentacene film. Here the total band states is with , .

Image of FIG. 4.

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FIG. 4.

Calculated effective mobility vs gate voltage, at various disorder levels and transport hybrid levels , for the above OFET. (c) and (d) are the effective mobility calculated as a function of temperature, at .

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/content/aip/journal/apl/98/23/10.1063/1.3599485
2011-06-08
2014-04-23

Abstract

A theoretical analysis of the carrier mobility in organic transistors is presented. We noticed that the assumption of zero potential at open/quasi-free surface may cause a large deviation of the areal charge density in the organic film, greater in thinner-film transistors. Taking into account this effect, the effective mobility is obtained using the Kubo–Greenwood integral, which provides the total conductivity in the band and thus in the whole organic film. The mobility is studied with respect to gate voltage and temperature, for various disorder and transport diffusivity levels, enabling a better insight of the carrier mobility in organic transistors.

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Scitation: Theoretical analysis of carrier mobility in organic field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3599485
10.1063/1.3599485
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