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A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect
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10.1063/1.3599490
/content/aip/journal/apl/98/23/10.1063/1.3599490
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3599490
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic view of the accumulation and transport of oxygen ions at the interface between electrode and oxide layer.

Image of FIG. 2.
FIG. 2.

(a) Calculated concentration distribution as a function of depth from the interface with different interface barrier. (b) Calculated time evolution of concentration at different point.

Image of FIG. 3.
FIG. 3.

Switching curves of ZnO device: (a) with TiN as cathode and (b) with Pt as cathode.

Image of FIG. 4.
FIG. 4.

(a) Measured pulse voltage dependency of RESET time for TiN cathode device and the fitting curve based on the model. The inset shows the oscilloscope view of the pulse with minimal width in the measurement, indicating the RC delay effect can be ignored even though the pulse width is as narrow as . (b) Measured pulse voltage dependency of RESET time for TiN and Pt cathode devices.

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/content/aip/journal/apl/98/23/10.1063/1.3599490
2011-06-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3599490
10.1063/1.3599490
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