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Terahertz response of field-effect transistors in saturation regime
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10.1063/1.3584137
/content/aip/journal/apl/98/24/10.1063/1.3584137
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/24/10.1063/1.3584137
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured current-voltage characteristics of the InGaAs/GaAs HEMT at different gate-to-source voltages. Inset shows the measured characteristics for different drain-to-source voltages.

Image of FIG. 2.
FIG. 2.

Measured and calculated [Eq. (4)] broadband THz response at 1.63 THz as a function of the drain-to-source voltage for different gate-bias voltages. The responses start to grow linearly when transistor is driven deeper in the saturation regime. The transistor threshold voltage is 0.48 V and the load resistor was .

Image of FIG. 3.
FIG. 3.

Measured and calculated THz response as a function of the drain current for gate biases: (a) 0.5 V and (b) 0.55 V. The linear responsivity in the saturation regime appears clearly on the proper linear scale. Equation (4) matches the responses in all regimes very well.

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/content/aip/journal/apl/98/24/10.1063/1.3584137
2011-06-15
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz response of field-effect transistors in saturation regime
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/24/10.1063/1.3584137
10.1063/1.3584137
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