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Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
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10.1063/1.3595487
/content/aip/journal/apl/98/24/10.1063/1.3595487
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/24/10.1063/1.3595487
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Device schematic for a (9/12 nm) MQW solar cell with various dopant concentrations in both the n- and p-GaN regions adjacent to the active region.

Image of FIG. 2.
FIG. 2.

(a) Dark and illuminated curves illustrating the knee voltage for an InGaN MQW solar cell with and . (b) Dependence of EQE on wavelength for the same device under varying bias levels.

Image of FIG. 3.
FIG. 3.

Simulated energy band diagrams for an InGaN MQW solar cell with low Si and Mg doping ( and ) at equilibrium (dashed line) and with −3 V bias applied to the n-contact (dotted line) and for an InGaN MQW solar cell with high Si and Mg doping ( and ) at equilibrium (solid line).

Image of FIG. 4.
FIG. 4.

Dark and illuminated curves for InGaN MQW solar cell with varying from 0.6 to and . Inset: dependence of EQE on wavelength for the device with .

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/content/aip/journal/apl/98/24/10.1063/1.3595487
2011-06-16
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/24/10.1063/1.3595487
10.1063/1.3595487
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