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Device schematic for a (9/12 nm) MQW solar cell with various dopant concentrations in both the n- and p-GaN regions adjacent to the active region.
(a) Dark and illuminated curves illustrating the knee voltage for an InGaN MQW solar cell with and . (b) Dependence of EQE on wavelength for the same device under varying bias levels.
Simulated energy band diagrams for an InGaN MQW solar cell with low Si and Mg doping ( and ) at equilibrium (dashed line) and with −3 V bias applied to the n-contact (dotted line) and for an InGaN MQW solar cell with high Si and Mg doping ( and ) at equilibrium (solid line).
Dark and illuminated curves for InGaN MQW solar cell with varying from 0.6 to and . Inset: dependence of EQE on wavelength for the device with .
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