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Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
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/content/aip/journal/apl/98/24/10.1063/1.3595487
2011-06-16
2014-11-26

Abstract

The effect of doping and polarization on carrier collection is investigated for InGaNquantum wellsolar cells.Energy band diagram simulations of actual devices indicate that spontaneous and piezoelectric polarization sheet charges can inhibit carrier collection unless these charges are screened by sufficient doping. By increasing the doping on both sides of the active region, the polarization-induced barriers to carrier collection were eliminated and the short circuit current density was increased from 0.1 to under 1.5 sun AM1.5G equivalent illumination, leading to devices with an open circuit voltage of 1.9 V and a fill factor of 71%.

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Scitation: Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/24/10.1063/1.3595487
10.1063/1.3595487
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