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Charge trapping process of nonvolatile memory devices based on CdTe and CdTe–CdSe core-shell nanoparticles/poly(methylmethacrylate) nanocomposites
4.B. C. de Brito, E. C. P. Smits, P. A. van Hal, T. C. T. Geuns, B. de Boer, C. J. M. Lasance, H. L. Gomes, and D. M. de Leeuw, Adv. Mater. (Weinheim, Ger.) 20, 3750 (2008).
5.S. H. Song, B. J. Cho, T. W. Kim, Y. S. Ji, M. S. Jo, G. U. Wang, M. H. Choe, Y. H. Kahng, H. S. Hwang, and T. H. Lee, Adv. Mater. (Weinheim, Ger.) 22, 5048 (2010).
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Nonvolatile memory devices based on CdTe and CdTe–CdSe core-shell nanoparticles embedded in a poly(methylmethacrylate) (PMMA) layer were fabricated to investigate the variation in the carrier transport mechanisms due to a CdSe shell. Capacitance-voltage (C-V) curves for Al/CdTe nanoparticles embedded in PMMA/ and Al/CdTe–CdSe nanoparticles embedded in PMMA/ devices at 300 K showed that the flatband voltage shift of the C-V curve for the device with the CdTe–CdSe nanoparticles was relatively smaller than that for the device with the CdTenanoparticle. Carrier transport mechanisms of the memory devices are described by using the C-V results, energy band diagrams, and capacitance-time retentions.
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