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Cross-sectional TEM image of a Ni/Ni–InP/InP interface annealed at for 1 min.
of Ni–InP layer and doped layer as a function of RTA temperature (alloy formation temperature, activation temperature).
(a) characteristics of Ni–InP alloy/n-InP junction with a variety of alloy formation temperature, (b) RTA temperature dependence of SBH for electrons, and (c) characteristics of Ni–InP alloy/p-InP junction.
Fabrication process of InP MOSFET with self-aligned metal S/D structure.
(a) , (b) characteristics of an InP MOSFET with self-aligned metal S/D. and are and , respectively.
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