1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy
Rent:
Rent this article for
USD
10.1063/1.3597228
/content/aip/journal/apl/98/24/10.1063/1.3597228
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/24/10.1063/1.3597228
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM image of a Ni/Ni–InP/InP interface annealed at for 1 min.

Image of FIG. 2.
FIG. 2.

of Ni–InP layer and doped layer as a function of RTA temperature (alloy formation temperature, activation temperature).

Image of FIG. 3.
FIG. 3.

(a) characteristics of Ni–InP alloy/n-InP junction with a variety of alloy formation temperature, (b) RTA temperature dependence of SBH for electrons, and (c) characteristics of Ni–InP alloy/p-InP junction.

Image of FIG. 4.
FIG. 4.

Fabrication process of InP MOSFET with self-aligned metal S/D structure.

Image of FIG. 5.
FIG. 5.

(a) , (b) characteristics of an InP MOSFET with self-aligned metal S/D. and are and , respectively.

Loading

Article metrics loading...

/content/aip/journal/apl/98/24/10.1063/1.3597228
2011-06-13
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/24/10.1063/1.3597228
10.1063/1.3597228
SEARCH_EXPAND_ITEM