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Epitaxial growth of high mobility thin films on CdS
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) RHEED pattern along direction of an as-grown surface of with a thickness of 49 QLs. (b) RHEED oscillations of intensity measured (blue, solid) and fitted curve (red, dashed) of the specular beam. The oscillation period is found to be 110 s, corresponding to a growth rate of . (c) AFM image of the thin film with the size of . (d) The height profile along the solid red line marked in (c), showing a step size of 0.95 nm. (e) HRTEM of a grown on a CdS (0001) substrate.

Image of FIG. 2.
FIG. 2.

(a) Core level photoemission of the thin film grown on the CdS substrate with the thickness of 49 QL. Both Se and Bi core levels are measured with 100 eV photons. Inset: LEED pattern of the thin film showing a plane structure. (b) ARPES intensity map of the 49 QL thin film along direction. The data were taken using 52 eV photons.

Image of FIG. 3.
FIG. 3.

(a) 49 QL Hall bar device structure, with the size of . (b) The dependence of the device longitudinal resistance on temperature. Three regions are marked, with metal-like behavior in region 1, bulk carrier frozen-out in region 2, and carrier saturation in region 3, respectively. (c) Carrier density of the 49 QL-thick thin film grown on the CdS substrate as a function of . The activation energy in the bulk is 20 meV. (d) Hall mobility vs temperature of the Hall bar. The mobility scales as when .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of high mobility Bi2Se3 thin films on CdS