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LWR analysis for nanowire-mask-based GNRs. (a) The left panel shows the schematics of the nanowire-mask-based patterning method; the middle panel shows the AFM image of a fabricated GNR on top of 300 nm layer; the right panel shows the extracted edge-profile image for LWR analysis. (b) The top panel shows a typical width sampling (smoothened) along the L-direction of a SLR vs the distance along the L-direction . The LWR amplitude, , is defined as the standard deviation of the sampled width values. The bottom panel shows the autocorrelation function of the sampled widths vs . The correlation length, , is defined as the half-height length of the autocorrelation function [i.e., ].
Width-dependence of LWR data in nanowire-mask-based GNRs. (a) curve in GNRs with different number of layers (SLR: single-layer GNR, BLR: bilayer GNR). GNRs in Ref. 17 are typically not SLRs (i.e., non-SLR). The linear fit (all data included) shows with . The smallest is less than 5 nm in SLRs with . (b) curve in GNRs with different number of layers. The stays around 10–20 nm for W from 30 to 80 nm.
Transport properties and on/off ratios of nanowire-mask-based GNR devices in the presence of LWR. (a) Four-terminal curves (shifted by ) of two typical SLRs at both and 77 K. To reduce the dimension effect, samples are chosen with a similar L value and the conductance is normalized by W. (b) The on/off ratios of as-made GNRs (both SLRs and BLRs, ) vs the averaged width (W). Here the low-bias conductance at both on- and off-states are measured at and , respectively. The values of and are labeled as (x/y): (unit: nm). The guide to the eyes shows that the on/off ratios are generally lower in BLRs than those in SLRs.
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