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Spin current depolarization under high electric fields in undoped InGaAs
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) A schematic illustration of the sample structure used in this letter. To apply and detect the voltages, four ohmic contacts are made at the edges of the undoped-InGaAs Hall bar. Circularly polarized light is irradiated from the normal direction to the center of the Hall bar. (b) A schematic illustration of the optically induced ISHE.

Image of FIG. 2.
FIG. 2.

(a) The degree of circular polarization dependence of for applying electric field . (b) The light intensity and applying electric field dependences of the transverse electric field for the degree of circular polarization .

Image of FIG. 3.
FIG. 3.

(a) The applying electric field dependence of the longitudinal current density in undoped InGaAs system with light irradiation at light intensity . (b) The changes in transverse electric field generated by circularly polarized light and high electric field.

Image of FIG. 4.
FIG. 4.

(a) The nonlinear current density dependence of the deviation caused by the Auger process. The solid curves are fitting results using [Eq. (5)]. (b) The fitting result in the difference in up-spin and down-spin density . (c) in the initial density of holes .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin current depolarization under high electric fields in undoped InGaAs