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Absorption spectrum of Mg-doped InN and undoped InN samples (fitted with dashed lines). The Mg-doped InN is with a surface electron density . The undoped InN is with an electron density , both determined by Hall measurement.
(a) Experimental results (open symbols) for sample C and theoretical prediction (solid symbols) of hole distribution changes over electron distribution changes . The experimental result is obtained by the three exponential decay fitting with 1300 nm (square) and 1500 nm (circle) wavelength. The error bar of the theoretical prediction is attributed to the uncertainty of background hole densities . The bandgap energy used for theoretical prediction is 0.595 eV. (b), (c) Normalized transient transmission difference (ΔT) of sample A obtained at (b) 1300 nm with photoexcited carrier density and at (c) 1500 nm with photoexcited carrier density . Both traces are fitted with 2 exponential decays (red dotted line) and 3 exponential decays (blue dashed line). (d) Normalized transient transmission changes with ΔT of samples B (blue) and C (red) obtained at 1500 nm with photoexcited carrier densities of and respectively.
(a) Observed invert hole heating time with four samples (A: black solid square, B: blue open square, C: red solid circle, and D: black open circle). Solid line shows the theoretical calculation of hole phonon absorption rate dominated by the hole screening effect, calibrated by the measured hole heating time (purple solid triangle) in an unintentionally doped n-type InN sample with a background electron density of . The background hole density is estimated according to absorption spectra with a band gap energy of . (b) The background hole density is determined by fitting the experimental data with the hole screening model using the least square difference.
Measured background hole densities and band gap energies based on the hole screening effect.
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