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Band gaps of CZTSSe as a function of derived from PL (solid squares) and from EQE (solid circles). The solid lines are linear fits to the data.
(a)–(c) Comparisons of pumped (flat band) UPS spectra for bare CZTSSe and CdS/CZTSSe for (a) , (b) , and (c) revealing the VB offsets for each case. (d) Comparison of unpumped and pumped cases, photoinduced band flattening shifts the spectrum by 0.28 eV to lower binding energy revealing the p-type nature of the CZTSSe under the CdS film.
(a) Plot of CdS/CZTSSe VB offset as a function of . (b) Plots of linear fits for valence edge shift, CZTSSe band gap (from EQE), and CdS/CZTSSe VB and CB offsets. Filled squares are the data points for the CdS/CZTSSe CB offset derived from experiment.
Schematic electronic structure for the CdS/CZTSSe heterojunction for: (left) fully selenized, (middle) , and (right) fully sulfurized.
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