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Band alignment at the interface
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10.1063/1.3600776
/content/aip/journal/apl/98/25/10.1063/1.3600776
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/25/10.1063/1.3600776
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Band gaps of CZTSSe as a function of derived from PL (solid squares) and from EQE (solid circles). The solid lines are linear fits to the data.

Image of FIG. 2.
FIG. 2.

(a)–(c) Comparisons of pumped (flat band) UPS spectra for bare CZTSSe and CdS/CZTSSe for (a) , (b) , and (c) revealing the VB offsets for each case. (d) Comparison of unpumped and pumped cases, photoinduced band flattening shifts the spectrum by 0.28 eV to lower binding energy revealing the p-type nature of the CZTSSe under the CdS film.

Image of FIG. 3.
FIG. 3.

(a) Plot of CdS/CZTSSe VB offset as a function of . (b) Plots of linear fits for valence edge shift, CZTSSe band gap (from EQE), and CdS/CZTSSe VB and CB offsets. Filled squares are the data points for the CdS/CZTSSe CB offset derived from experiment.

Image of FIG. 4.
FIG. 4.

Schematic electronic structure for the CdS/CZTSSe heterojunction for: (left) fully selenized, (middle) , and (right) fully sulfurized.

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/content/aip/journal/apl/98/25/10.1063/1.3600776
2011-06-21
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band alignment at the Cu2ZnSn(SxSe1−x)4/CdS interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/25/10.1063/1.3600776
10.1063/1.3600776
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