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High- amorphous hafnium oxide films from high rate room temperature deposition
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10.1063/1.3601487
/content/aip/journal/apl/98/25/10.1063/1.3601487
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/25/10.1063/1.3601487
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Capacitance-voltage characteristics and (b) leakage current density as a function of electric field for a HiTUS thin film (thickness ). Measurements were performed using an MIS capacitor structure.

Image of FIG. 2.
FIG. 2.

XRD scans of a typical (a) as-deposited and (b) vacuum annealed HiTUS . The broad diffraction feature around in (a) is ascribed to amorphous while (b) matches the diffraction pattern of polycrystalline cubic (ICDD-PDF file 53-0550). (c) shows an XRD scan of a bare Si wafer for reference highlighting substrate-related reflections.

Image of FIG. 3.
FIG. 3.

A plan-view TEM image of a typical as-deposited HiTUS demonstrating the amorphous nature of the layer and the absence of nanocrystallites. An electron diffraction pattern is inset which shows diffuse halos, also consistent with the fully amorphous nature of the layer.

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/content/aip/journal/apl/98/25/10.1063/1.3601487
2011-06-23
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-k(k=30) amorphous hafnium oxide films from high rate room temperature deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/25/10.1063/1.3601487
10.1063/1.3601487
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