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Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers
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10.1063/1.3601855
/content/aip/journal/apl/98/25/10.1063/1.3601855
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/25/10.1063/1.3601855
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The electrical resistivity of the InN layer between 300 and 77 K increases with temperature above 100 K, with a clear linear behavior above 130 K, which is an indication of a metallic behavior. The inset is a schematic of the TLM patterns used for the measurements.

Image of FIG. 2.
FIG. 2.

Voltage noise spectral densities measured for different dc bias currents: (a) 300 K , the curves are dominated by the 1/f noise contribution with the usual slope of −1. (b) Apart from the white and 1/f noise contributions, at 77 K , a Lorentzian contribution is now visible.

Image of FIG. 3.
FIG. 3.

The Arrhenius diagram obtained by plotting as a function of , a trap energy level of 52 meV below the conduction band minimum is obtained.

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/content/aip/journal/apl/98/25/10.1063/1.3601855
2011-06-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/25/10.1063/1.3601855
10.1063/1.3601855
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