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Electrical spin accumulation with improved bias voltage dependence in a crystalline CoFe/MgO/Si system
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10.1063/1.3600787
/content/aip/journal/apl/98/26/10.1063/1.3600787
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/26/10.1063/1.3600787
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic diagram of the device geometry and three-terminal Hanle measurement. (b) Typical J-V characteristics of the CoFe∼(5 nm)/MgO(2 nm)/n-Si tunnel contact at 300 K. Left inset: temperature dependence of ZBR (normalized). Right inset: BDR fit (solid line) to the G-V curve at 5 K.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Voltage change (ΔV) across the CoFe/MgO/n-Si tunnel contact as a function of the transverse magnetic field () at 300 K for bias voltage (Vb = VFM VSi ) of 0.15 V at  = 0. The solid lines represent the Lorentzian fits. The closed circle shows the in-plane measurement (). (b) Electrical Hanle signal (ΔV) versus transverse magnetic field () over the temperature (T) range of 5-300 K at bias voltage (Vb ) of 0.15 V (, spin injection/extraction condition) for the tunnel contact. The bias currents varied from (5 K) to (300 K). (c) Electrical Hanle signal (), spin RA product (), and spin lifetime () vs. the temperature () at the bias voltages () of 0.15 V.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Electrical Hanle signal (), (b) spin signal (), and (c) spin lifetime () vs. the bias voltage () up to V over the entire temperature range of 5-300 K. The bias current range varied from (5 K) to (300 K).

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/content/aip/journal/apl/98/26/10.1063/1.3600787
2011-06-27
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical spin accumulation with improved bias voltage dependence in a crystalline CoFe/MgO/Si system
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/26/10.1063/1.3600787
10.1063/1.3600787
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