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Local and non-local magnetoresistance with spin precession in highly doped Si
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10.1063/1.3604010
/content/aip/journal/apl/98/26/10.1063/1.3604010
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/26/10.1063/1.3604010
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Cross section showing a 4 terminal lateral device. An external magnetic field was applied along the long axis of the magnetic contact (y-direction) for NL measurements. The Hanle-type spin precession is expressed as a function of applied magnetic field along the z-direction.

Image of FIG. 2.
FIG. 2.

(Color online) Results of the spin signals in (a) NL and (b) local measurements in the sample with d L = 1.55 µm at 8 K. The dc electric current of 1 mA was applied between contacts 1 and 2 in NL, and between contacts 2 and 3 in local measurements. The data shown is after removal of an offset voltage of 100 µV in NL measurements. The measurements were repeated 9 times and averaged in order to obtain clear and consistent data. The increasing magnetic field (red circle) results in the maximum in the positive field, where contact 2 and 3 are antiparallel configuration. Similarly, the decreasing magnetic field (blue square) results in the maximum in the negative field.

Image of FIG. 3.
FIG. 3.

(Color online) Comparison of gap dependence of spin signal in NL and local measurements. The red (circles) and blue (squares) lines are obtained from the function of spin diffusion model. The inset shows the gap dependence of ΔV MRV non-local ratio.

Image of FIG. 4.
FIG. 4.

(Color online) The Hanle-type spin precession signals in (a) NL and (b) local measurements at 8 K. The arrows show the magnetization alignments at contacts 2 and 3. The peak at zero field does not appear in measurements that include parallel alignments in local measurement.

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/content/aip/journal/apl/98/26/10.1063/1.3604010
2011-06-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Local and non-local magnetoresistance with spin precession in highly doped Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/26/10.1063/1.3604010
10.1063/1.3604010
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