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Electron holographic tomography for mapping the three-dimensional distribution of electrostatic potential in III-V semiconductor nanowires
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10.1063/1.3604793
/content/aip/journal/apl/98/26/10.1063/1.3604793
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/26/10.1063/1.3604793
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Figures

Image of FIG. 1.
FIG. 1.

Schematic of the as-grown structures and corresponding FE-SEM micrographs (45°-tilted view) of a typical (a) GaAs, and (b) GaAs-AlGaAs core-shell NW. The micrographs were recorded with the NWs still on their original growth substrate. The Au-catalyst nanoparticle (Au NP) employed to self-assemble the NWs can be seen at the tip of both nanostructures.

Image of FIG. 2.
FIG. 2.

(Color online) 3D potential of a GaAs NW, reconstructed by EHT: (a) phase image of the tilt series (tilt angle of 6°); (b) 9 V-isosurface of the 3D potential of the NW, where its faceted sidewall morphology is visible; (c) histogram of the 3D potential with the peak at 14.1 V representing the MIP of GaAs; and (d) line scan through the center of the NW, in the direction of the arrow in (b).

Image of FIG. 3.
FIG. 3.

(Color online) 3D potential of a GaAs-AlGaAs core-shell NW, reconstructed by EHT: (a) volume rendering; (b) surface rendering, of the 9 V-isosurface, showing the {110}-side-wall facets perpendicular to the NW 〈111〉 growth direction; (c) cross-sectional map obtained by averaging the potential over a 110-nm long section of the NW, showing its hexagonal cross-section; and (d) line profile obtained as mean of the two line-scans indicated by the arrows in (c).

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/content/aip/journal/apl/98/26/10.1063/1.3604793
2011-06-28
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron holographic tomography for mapping the three-dimensional distribution of electrostatic potential in III-V semiconductor nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/26/10.1063/1.3604793
10.1063/1.3604793
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