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Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation
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10.1063/1.3604795
/content/aip/journal/apl/98/26/10.1063/1.3604795
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/26/10.1063/1.3604795
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current density-voltage characteristics for Ni/n-type 4H-SiC Schottky structures electron-irradiated at 400 keV with the fluences from 6.0 × 1015 to 1.9 × 1018 cm−2. The characteristics of the as-grown sample are also shown for comparison.

Image of FIG. 2.
FIG. 2.

Dependence of the resistivity for electron-irradiated n-type 4H-SiC layers on the electron fluence.

Image of FIG. 3.
FIG. 3.

1/C2–V characteristics for Ni/4H-SiC Schottky structure electron-irradiated at 400 keV, with a fluence of 1.9 × 1018 cm−2. The irradiated sample exhibits a semi-insulating property. The characteristics of the as-grown sample are also shown for comparison.

Image of FIG. 4.
FIG. 4.

Semilogarithmic plot of the Z1/2 and EH6/7 concentrations in as-irradiated 4H-SiC samples vs the electron energy. The Z1/2 and EH6/7 concentrations are normalized by the electron fluence.

Image of FIG. 5.
FIG. 5.

Calculated carrier concentration and the resistivity as a function of the Fermi level for n-type 4H-SiC, where a fixed electron mobility of 800 cm2/Vs was assumed.

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/content/aip/journal/apl/98/26/10.1063/1.3604795
2011-06-29
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/26/10.1063/1.3604795
10.1063/1.3604795
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