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Current density-voltage characteristics for Ni/n-type 4H-SiC Schottky structures electron-irradiated at 400 keV with the fluences from 6.0 × 1015 to 1.9 × 1018 cm−2. The characteristics of the as-grown sample are also shown for comparison.
Dependence of the resistivity for electron-irradiated n-type 4H-SiC layers on the electron fluence.
1/C2–V characteristics for Ni/4H-SiC Schottky structure electron-irradiated at 400 keV, with a fluence of 1.9 × 1018 cm−2. The irradiated sample exhibits a semi-insulating property. The characteristics of the as-grown sample are also shown for comparison.
Semilogarithmic plot of the Z1/2 and EH6/7 concentrations in as-irradiated 4H-SiC samples vs the electron energy. The Z1/2 and EH6/7 concentrations are normalized by the electron fluence.
Calculated carrier concentration and the resistivity as a function of the Fermi level for n-type 4H-SiC, where a fixed electron mobility of 800 cm2/Vs was assumed.
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