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Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation
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10.1063/1.3604795
/content/aip/journal/apl/98/26/10.1063/1.3604795
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/26/10.1063/1.3604795
/content/aip/journal/apl/98/26/10.1063/1.3604795
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/content/aip/journal/apl/98/26/10.1063/1.3604795
2011-06-29
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/26/10.1063/1.3604795
10.1063/1.3604795
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