Full text loading...
(Color online) Luminescent characteristics of the m-plane InGaN/GaN QW structure. (a) CL spectra taken at room temperature showing two emission peaks in an area average (raster mode) of 500 μm2 and at specific positions (spot mode) S1 and S2 in (b). (b) Monochromatic plan-view CL image taken at room temperature at peak B emission (λ = 428 nm).
Cross-section TEM images of the region containing the QWs and the top surface, showing the presence of basal-plane stacking faults and their bounding partial dislocations. (a) projection with g = . (b) projection with g = showing dislocation half loops surrounding I1 stacking faults, which are observed edge-on in (a).
(Color online) Temperature dependence of the CL emission of m-plane InGaN quantum well structures. (a) CL spectra taken over the 4–300 K range, using an electron beam current of 0.4 nA. Each spectrum is fitted well with two Gaussian curves, the peak values of which are indicated by A and B. Contribution of donor-acceptor recombination in the p-type GaN layer is observed for E > 3 eV. (b) Carrier injection effects on CL spectra as a function of temperature. Peak energy values of A and B as a function of temperature for electron beam current of 0.01 nA (solid lines) and 10 nA (dashed lines).
(Color online) Recombination dynamics of QW emission. CL lifetime τCL, radiative lifetime τrad, and non-radiative lifetime τnonrad were deduced from the temperature-dependent TRCL data and integrated CL intensity.
Article metrics loading...