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On the effect of Ti on the stability of amorphous indium zinc oxide used in thin film transistor applications
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10.1063/1.3605589
/content/aip/journal/apl/98/26/10.1063/1.3605589
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/26/10.1063/1.3605589
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Glancing incident angle x-ray diffraction patterns of Ti/IZO (100 nm/100 nm) taken from the as-deposited sample (lower scan) and annealed at 200 °C for 20 h sample (upper scan).

Image of FIG. 2.
FIG. 2.

(a) A cross sectional bright field TEM image and (b) plan-view SAD pattern of the Ti/IZO bilayer (20 nm/20 nm) samples after annealing at 200 °C for 20 h showing TiO2 formation and IZO crystallized in the In2O3 bixbyite structure.

Image of FIG. 3.
FIG. 3.

(Color online) In-situ resistivity measurements of a-IZO with and without Ti contact metallization annealed at 200 °C. The two insets show schematic views of the patterned Ti/IZO (left hand side) and bare IZO (right hand side) samples.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Experimentally obtained resistivity vs time curves showing the change in resistivity during heating at temperatures of 180 °C, 200 °C, 210 °C, and 220 °C and (b) Arrhenius plot of 1/τ vs reciprocal annealing temperature from which an activation energy (Ea) of 1.06 eV was found.

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/content/aip/journal/apl/98/26/10.1063/1.3605589
2011-06-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the effect of Ti on the stability of amorphous indium zinc oxide used in thin film transistor applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/26/10.1063/1.3605589
10.1063/1.3605589
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