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Epitaxial growth of Heusler alloy Co2MnSi/MgO heterostructures on Ge(001) substrates
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10.1063/1.3605675
/content/aip/journal/apl/98/26/10.1063/1.3605675
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/26/10.1063/1.3605675
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Cross-sectional HRTEM lattice image of a heterostructure consisting of CMS (5 nm)/MgO interlayer (3 nm)/Ge(001) substrate with a co-sputtered Co2Mn1.32Si0.88 film along the [1-10] direction of the Ge substrate (corresponding to the [1-10]CMS direction), where the CMS film was annealed in situ at 500 °C after it was deposited at RT. (b) Electron diffraction pattern for the CMS film (5 nm). The electron beam diameter was 2.5 nm.

Image of FIG. 2.
FIG. 2.

(Color online) Typical magnetic hysteresis curves for CMS films (20 nm) on MgO interlayer (3 nm)/Ge(001) substrates at 10 K, where H was applied in the plane of the film along the [1-10]CMS easy axis. (a) Magnetic hysteresis curves for CMS films with various T a values in the range from 400 to 525 °C up to ±10 kOe. (b) Magnetic hysteresis curves for CMS films with T a = 400 or 500 °C at 10 K up to smaller magnetic fields of ±500 Oe.

Image of FIG. 3.
FIG. 3.

(Color online) Saturation magnetization per formula unit (µ s) and coercive force (H c) for CMS films (20 nm) on MgO(001) interlayer (3 nm)/Ge(001) substrates as a function of T a at 10 K and 300 K, where H was applied in the plane along the [1-10]CMS easy axis. The film composition was intentionally Mn-rich Co2Mn1.32Si0.88.

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/content/aip/journal/apl/98/26/10.1063/1.3605675
2011-06-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of Heusler alloy Co2MnSi/MgO heterostructures on Ge(001) substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/26/10.1063/1.3605675
10.1063/1.3605675
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