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HRXRD scan of the (0002) x-ray reflection of the InN reference sample and the InN/InGaN MQW structures compared to theoretical calculations using the X’PERT EPITAXY 40 software from Phillips Analytical. Measurements are vertically shifted for clarity.
(a) Dark field TEM micrograph of the MQW sample with . In the inserted profile along c, the QWs are well delineated. (b) AFM image of the same sample exhibiting atomic steps.
Low temperature PL spectra of the analyzed samples. Inset: recombination energies as a function of In content in the barriers obtained from electronic simulations considering the structure fully relaxed (open squares), fully strained on InN (solid squares), and experimental PL peak energy (solid circles).
Z-scan measurements of InN sample and samples with and . The fitting to Eq. (1) is also shown for each case.
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