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Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths
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10.1063/1.3535609
/content/aip/journal/apl/98/3/10.1063/1.3535609
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/3/10.1063/1.3535609
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Figures

Image of FIG. 1.
FIG. 1.

HRXRD scan of the (0002) x-ray reflection of the InN reference sample and the InN/InGaN MQW structures compared to theoretical calculations using the X’PERT EPITAXY 40 software from Phillips Analytical. Measurements are vertically shifted for clarity.

Image of FIG. 2.
FIG. 2.

(a) Dark field TEM micrograph of the MQW sample with . In the inserted profile along c, the QWs are well delineated. (b) AFM image of the same sample exhibiting atomic steps.

Image of FIG. 3.
FIG. 3.

Low temperature PL spectra of the analyzed samples. Inset: recombination energies as a function of In content in the barriers obtained from electronic simulations considering the structure fully relaxed (open squares), fully strained on InN (solid squares), and experimental PL peak energy (solid circles).

Image of FIG. 4.
FIG. 4.

Z-scan measurements of InN sample and samples with and . The fitting to Eq. (1) is also shown for each case.

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/content/aip/journal/apl/98/3/10.1063/1.3535609
2011-01-19
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/3/10.1063/1.3535609
10.1063/1.3535609
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