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Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers
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10.1063/1.3541782
/content/aip/journal/apl/98/3/10.1063/1.3541782
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/3/10.1063/1.3541782
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL (full lines) and absorption (dashed lines) spectra measured at RT and at 5 K and detected by an InGaAs detector. Inset: conduction and valence band edge profiles and electron and hole confined states (energies not to scale); the transitions visible in the absorption and PL spectra are also shown.

Image of FIG. 2.
FIG. 2.

PL spectra measured between 5 K and RT. PL was detected by an InGaAs detector. Inset: peak energy of the and transitions as a function of the sample temperature, with the full lines giving the variation with temperature according to the literature parameters for the Ge bulk direct bandgap (see Ref. 16).

Image of FIG. 3.
FIG. 3.

Ratio of the integrated intensity of the direct recombination and of the indirect recombination as a function of the reciprocal temperature. PL was detected by a PbS detector. Inset: the RT PL spectrum.

Image of FIG. 4.
FIG. 4.

Ratio of the integrated intensity of the direct and indirect recombination as a function of the reciprocal temperature for . PL was detected by a PbS detector. The slope of the straight line gives an activation energy .

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/content/aip/journal/apl/98/3/10.1063/1.3541782
2011-01-20
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/3/10.1063/1.3541782
10.1063/1.3541782
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