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(a) Schematic cross-sectional structure of the QD sample S1, (b) AFM image of top grown GaSb QDs, (c) histogram of the lateral size S, and (d) histogram of the asymmetry of the GaSb QDs. The red dashed lines in [(c) and (d)] show the corresponding Gaussian fits.
(a) 2DEG concentration of the two Hall bars of sample S1 as a function of gate voltage measured at 4.2 K, the inset shows the schematic graph of Hall bars in two directions. (b) dependence of measured electron Hall mobilities and of both QD sample S1 and reference sample S2. (c) Experimental dots-originated anisotropic mobilities as functions of .
Calculated anisotropic mobility ratio as a function of for different values of the length L and the width W of the GaSb QDs. The squares denote the experimental ratio . The inset shows the schematic shape of the elongated GaSb QDs in the Cartesian coordinate system.
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