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Schematic of MIS based capacitor structure. Cu is directly deposited on 30 nm over -type Si substrate.
TDDB MTTF vs electric field at for MIS capacitors with a TaN/Ta barrier and without a barrier material. The slope is −6.2 cm/MV for TaN/Ta barrier and −0.9 cm/MV for no barrier. The no barrier structure has a low electric field acceleration which enables experimental validation of TDDB lifetime model in the presence of copper. The pre-exponential factor based on the model is for TaN/Ta and for no barrier.
TDDB failure distribution comparison for typical MIS capacitor and damascene structures. MIS capacitors generate much tighter failure distributions than damascene structures. The beta value or shape parameter of the Weibull distribution is 4.79 for the P-cap and 0.72 for the damascene.
TDDB MTTF vs electric field at for a MIS capacitor without a barrier material. The data support the but not the , , or power-law model. The value is 62.2 MV/cm and the pre-exponential factor is for the model.
Weibull distributions of TDDB failure time at . The corresponding electric fields, from left to right, are 10.0, 9.4, 8.8, 7.9, 7.0, 6.1, 5.5, 5.3, 4.9, 4.2, 4.2, and 3.5 MV/cm, respectively. The three electric fields used for the PL TDDB tests are 5.3, 4.2, and 3.5 MV/cm.
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