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(a) STEM image of the Fe/MgO/Ge(001) sample. (b) Determination of the MgO VBM by fitting the XPS MgO valence band spectrum (open circles) with the theoretical VBDOS (dashed line) broadened with a Voigt function taking into account the experimental resolution (continuous line). (c) Energy level scheme employed for the determination of the interface band alignment.
(a) XPS spectra from the Fe/MgO/Ge(n) samples before (top) and after (bottom) Fe growth, showing the core-level peaks employed for the band alignment evaluation and the VBMs. [(b)–(d)] Bandstructure line-up for Fe/MgO/Ge heterostructures with n (panel b), (panel c), and p-doping (panel d).
(a) Current density vs voltage characteristics, measured at RT, and (b) Richardson plots of the Fe/MgO/Ge(n) and junctions. The saturation current density in panel (b) is assumed to be proportional to , where is the temperature, is the electron charge, is the SBH, and is the Boltzmann constant, so that can be extracted from the slope of vs .
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