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Nonvolatile resistive switching in devices using multilayer graphene electrodes
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of PCMO device with MLG film as conducting electrode. (b) Raman spectra of pristine MLG films using 514-nm Ar laser.

Image of FIG. 2.
FIG. 2.

(a) Typical current-voltage curves for PCMO device with MLG electrode. The direction of dc sweep is indicated by arrows. The left inset shows the measurement configuration of the devices and the right inset, the current-voltage characteristics of PCMO device with Pt top electrode. (b) Pulse endurance and (c) retention characteristics of MLG/PCMO/Pt, indicating stable HRS and LRS for up to at .

Image of FIG. 3.
FIG. 3.

(a) Device area dependence of resistance values in HRS and LRS. (b) Comparison of Raman spectra of MLG/PCMO/Pt device in HRS and LRS, indicating sudden increase in D and peaks and shift of G peak position in HRS. (c) G peak position and intensity ratio of D peak to G peak in MLG films in pristine state, LRS, and HRS.

Image of FIG. 4.
FIG. 4.

Schematic illustrations of resistive switching in MLG/PCMO/Pt device: (a) HRS and (b) LRS.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes