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Vacancy-mediated diffusion in biaxially strained Si
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Image of FIG. 1.
FIG. 1.

Temperature dependencies of parameter in biaxially strained for Ge and Sb tracers for compressive (filled symbols) and tensile (open symbols) strains. The experimental values have been extracted from the results of Zangenberg et al. (Ref. 6) (circles) and Kringhøj et al. (Ref. 3) (squares). The lines are linear regressions of the corresponding data.

Image of FIG. 2.
FIG. 2.

Formation energies obtained by ab initio calculations of the silicon vacancy in different JT rearrangements (Ref. 14) and of the split vacancy with respect to the biaxial deformation. The two schemes represent the local geometries around the moving atom in the split-vacancy configuration. Lengths are given in bohr with error bars of 0.02 bohr for a deformation of ±1%. These positional errors are due to the fact that the given configurations are taken from NEB calculations and thus subject to the additional forces of the springs. The tensile region relaxes in RB distortion and the compressive region in LP one.


Generic image for table
Table I.

Experimental values for the and parameters in for Ge and Sb vacancy tracers at a given biaxial strain . The values in bold characters are reanalyses of the data from Eq. (2) of this letter.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vacancy-mediated diffusion in biaxially strained Si