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Second harmonic generation probing of dopant type and density at the interface
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10.1063/1.3505356
/content/aip/journal/apl/98/4/10.1063/1.3505356
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3505356
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TD-SHG from samples at various doping levels and types. (a) p-Si(111): circles (left axis) ; triangles (right axis) (note the transient drop of TD-SHG around ); (b) n-Si(111): circles ; triangles .

Image of FIG. 2.
FIG. 2.

Initial signal of TD-SHG of as a function of doping.

Image of FIG. 3.
FIG. 3.

Schematic for electron injection of electrons from Si to (dotted arrows), following three-photon excitation to Si conduction band, illustrating the potential (V) vs distance from the interface (Z), i.e., band bending, in heavily doped (a) n-type and (b) p-type Si.

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/content/aip/journal/apl/98/4/10.1063/1.3505356
2011-01-25
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Second harmonic generation probing of dopant type and density at the Si/SiO2 interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3505356
10.1063/1.3505356
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