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Focusing Laue-geometry for a wedge-shaped crystal.
400 Pendellösung oscillations of a Czochralski-grown silicon crystal at room temperature (crosses) measured at 59.3 keV compared to the ideal crystal behavior (solid line) with a period length of (Ref. 4).
Measurement of a Czochralski-grown silicon crystal compared to the theory of a statistically disturbed crystal with and .
Elongation of the Pendellösung distance with temperature: (solid gray line) , (dashed light gray line) , and (black dotted line) . The data are shifted vertically for increased clarity.
Measured data of the Pendellösung distance as a function of temperature. For comparison the Pendellösung distance at room temperature is also given [see Fig. 3]. is the 400 structure factor calculated out of and the Debye-coefficient.
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