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Thickness dependence of the integrated Bragg intensity for statistically disturbed silicon crystals
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10.1063/1.3531761
/content/aip/journal/apl/98/4/10.1063/1.3531761
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3531761

Figures

Image of FIG. 1.
FIG. 1.

Focusing Laue-geometry for a wedge-shaped crystal.

Image of FIG. 2.
FIG. 2.

400 Pendellösung oscillations of a Czochralski-grown silicon crystal at room temperature (crosses) measured at 59.3 keV compared to the ideal crystal behavior (solid line) with a period length of (Ref. 4).

Image of FIG. 3.
FIG. 3.

Measurement of a Czochralski-grown silicon crystal compared to the theory of a statistically disturbed crystal with and .

Image of FIG. 4.
FIG. 4.

Elongation of the Pendellösung distance with temperature: (solid gray line) , (dashed light gray line) , and (black dotted line) . The data are shifted vertically for increased clarity.

Tables

Generic image for table
Table I.

Measured data of the Pendellösung distance as a function of temperature. For comparison the Pendellösung distance at room temperature is also given [see Fig. 3]. is the 400 structure factor calculated out of and the Debye-coefficient.

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/content/aip/journal/apl/98/4/10.1063/1.3531761
2011-01-28
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thickness dependence of the integrated Bragg intensity for statistically disturbed silicon crystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3531761
10.1063/1.3531761
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