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Epitaxial growth of lanthanide oxides and on GaN
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10.1063/1.3541883
/content/aip/journal/apl/98/4/10.1063/1.3541883
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3541883
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Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction plots of (a) for a 350 Å and (b) 300 Å film deposited on GaN with 10 nm Si capping layer. The insets of (a) shows a -scan of the (400 peak of cubic . -scans of the (400 peak of cubic and (10–11) peak of hexagonal as shown in the inset of (b).

Image of FIG. 2.
FIG. 2.

Images from RHEED of (a) a bare GaN [11–20] surface with (b) 100 Å and (c) 100 Å . The image in (b) has been contrast-enhanced so that the RHEED pattern may be observed more clearly.

Image of FIG. 3.
FIG. 3.

Images from RHEED of GaN substrate with a 100 Å thin film followed by (a) 25 Å and (b) 100 Å , and then followed by an additional (c) 25 Å of and (d) 100 Å . (e) Plot of from and thin film stacks.

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/content/aip/journal/apl/98/4/10.1063/1.3541883
2011-01-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3541883
10.1063/1.3541883
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