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Gd-doping effect on performance of based resistive switching memory devices using implantation approach
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10.1063/1.3543837
/content/aip/journal/apl/98/4/10.1063/1.3543837
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3543837
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measurements of Gd-doped and undoped RRAM for continuous 100 cycles in dc sweeping mode. (a) Set and reset voltage distributions. (b) and distributions.

Image of FIG. 2.
FIG. 2.

Statistical measurement of different Gd-doped and undoped RRAM devices using pulse mode, with 1.5 V height, width pulse for set process, and −1.5 V height, width pulse for reset process. The resistance is read at 100 mV.

Image of FIG. 3.
FIG. 3.

Switching speed at different pulse heights in Gd-doped and undoped RRAM devices. (a) Minimum pulse width at different set pulse voltages. (b) Minimum pulse width at different reset pulse voltages.

Image of FIG. 4.
FIG. 4.

Retention property of Gd-doped RRAM devices tested at .

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/content/aip/journal/apl/98/4/10.1063/1.3543837
2011-01-25
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3543837
10.1063/1.3543837
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