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Top-down fabrication of AlGaN/GaN nanoribbons
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10.1063/1.3544048
/content/aip/journal/apl/98/4/10.1063/1.3544048
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3544048
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Normalized sheet resistance and in-plane biaxial strain as a function of NR width. The inset (a) shows the SEM image of one of the NR-based devices. The inset (b) shows the conductivity per NR as a function of the NR width.

Image of FIG. 2.
FIG. 2.

Total current at bias voltage of 2 V for several planar and NR-based structures as a function of the passivation thickness. The current in the AlGaN/GaN NR device is also normalized to the effective planar width (for a straightforward comparison between planar and NR-based devices).

Image of FIG. 3.
FIG. 3.

Frequency of the (high) phonon mode as a function of the frequency of the (LO) mode for NRs of different widths before and after the deposition of of .

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/content/aip/journal/apl/98/4/10.1063/1.3544048
2011-01-25
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Top-down fabrication of AlGaN/GaN nanoribbons
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3544048
10.1063/1.3544048
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