1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Photoabsorption and photoelectric process in Si nanocrystallites
Rent:
Rent this article for
USD
10.1063/1.3548861
/content/aip/journal/apl/98/4/10.1063/1.3548861
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3548861
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The variation of the energy for the ground (1s) and excited (1p, 2s, 2p) states and (b) the energy difference as a function of dot radius R for finite and infinite barrier heights.

Image of FIG. 2.
FIG. 2.

The variation of the photoabsorption coefficient for (a) the (1s-1p) transition and (b) the (2s-2p) transition as a function of the incident photon energy at different values of the dot radius R. –, finite barrier height , , , ; , Infinite barrier height , , , ; ●, experimental data of Krapf et al. (Refs. 8 and 17).

Image of FIG. 3.
FIG. 3.

The variation of the total photoelectric cross section from (a) the 1s state and (b) the 2s state as a function of incident photon energy. Captions are the same as in Fig. 2.

Loading

Article metrics loading...

/content/aip/journal/apl/98/4/10.1063/1.3548861
2011-01-27
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoabsorption and photoelectric process in Si nanocrystallites
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3548861
10.1063/1.3548861
SEARCH_EXPAND_ITEM