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RHEED patterns from a 200 nm thick buffer film surface grown on Si(111) taken along (a) the  and  azimuth directions, respectively. (b) and are RHEED patterns taken from a 10 nm thick zb–ZnSe layer surface grown at on . (c) and (d) are RHEED patterns taken along  from a 30 nm thick zb-ZnSe layer grown at on and a 30 nm thick wz-ZnSe layer grown at on , respectively. In (d), the forbidden diffractions from wz-ZnSe are indicated by arrows.
(a) HRTEM image taken along the zone axis of a sample containing heteroepitaxial layers of and ZnSe. (b) A zoom-in image of (a) in the region labeled. (c) TED image of the sample.
High resolution SEM images of surfaces of [(a) and (b)] 30 nm thick ZnSe grown on and [(c) and (d)] 20 nm thick on ZnSe. The magnifications in (a), (b), (c), and (d) are 50 000, 160 000, 50 000, and 150 000, respectively. The crystallographic directions of the films are indicated by white hexagons drawn.
(a) Reciprocal lattice parameter evolution during growth of a multilayer structure and the insets show the RHEED patterns of the last (i) ZnSe and (ii) layers of the structure. (b) XRD scans from (i) Si(111) substrate, (ii) 10-periods, and (iii) 20-periods of , respectively.
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