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Silicon nanowires for high-specificity and high-selectivity sensors under low-frequency scanning
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10.1063/1.3549067
/content/aip/journal/apl/98/4/10.1063/1.3549067
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3549067
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Relationship between the impedance and scanning frequency for different liquid samples. (b) A linear relationship between the impedance and concentration of the EtOH solution.

Image of FIG. 2.
FIG. 2.

(a) The equivalent circuit of the present sensor setup. (b) A simplified equivalent circuit for Fig. 2(a).

Image of FIG. 3.
FIG. 3.

(a) Schematic of the electric dipole induced between the adsorbate and the substrate H-terminated Si. M is the adsorbate ( membrane). (b) Charge density modification after a water molecule is adsorbed on a Si surface. The charge redistribution is defined as with water—.

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/content/aip/journal/apl/98/4/10.1063/1.3549067
2011-01-28
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon nanowires for high-specificity and high-selectivity sensors under low-frequency scanning
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3549067
10.1063/1.3549067
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