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(a) Cross-sectional schematic of a -SiC wafer with three epilayers, (b) cross-sectional schematic of the same wafer with patterned epilayers and nitrogen ion implanted regions, and (c) SEM micrograph of a fabricated JFET.
Oxide thickness as a function of time at . The symbols indicate measured results and the dashed lines indicate fits by Eq. (3).
HR-TEM micrographs of the -type epitaxial -SiC and type epitaxial -SiC interfaces.
Linear rate constant B/A and parabolic rate constant B at .
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