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Thermal oxidation of silicon carbide: A comparison of n-type and p-type doped epitaxial layers
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10.1063/1.3549294
/content/aip/journal/apl/98/4/10.1063/1.3549294
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3549294

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional schematic of a -SiC wafer with three epilayers, (b) cross-sectional schematic of the same wafer with patterned epilayers and nitrogen ion implanted regions, and (c) SEM micrograph of a fabricated JFET.

Image of FIG. 2.
FIG. 2.

Oxide thickness as a function of time at . The symbols indicate measured results and the dashed lines indicate fits by Eq. (3).

Image of FIG. 3.
FIG. 3.

HR-TEM micrographs of the -type epitaxial -SiC and type epitaxial -SiC interfaces.

Tables

Generic image for table
Table I.

Linear rate constant B/A and parabolic rate constant B at .

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/content/aip/journal/apl/98/4/10.1063/1.3549294
2011-01-28
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal oxidation of silicon carbide: A comparison of n-type and p-type doped epitaxial layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3549294
10.1063/1.3549294
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