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ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection
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10.1063/1.3551628
/content/aip/journal/apl/98/4/10.1063/1.3551628
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3551628
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic view of the photodetector device, which consists of ZnO thin film on c-sapphire substrate, vertically aligned ZnO nanowires, ITO contacts, and Ti/Au contacts.

Image of FIG. 2.
FIG. 2.

(a) Top-view and (b) side-view SEM images of as-grown p-type ZnO nanowires. (c) High-resolution TEM image of a single nanowire. The lattice spacing between two atomic layers is measured to be 0.52 nm. (d) SAED pattern, indicating the single-crystalline characteristic of the nanowire.

Image of FIG. 3.
FIG. 3.

(a) EBIC profile of the device. A clear peak can be seen in the area between the ZnO nanowires and ZnO film, representing the formation of junction. (b) curve of the ZnO nanowire FET under . Inset shows the SEM image of the NWFET. (c) curves of the ZnO nanowire FET recorded at different gate voltages.

Image of FIG. 4.
FIG. 4.

(a) I-V characteristics of the ZnO nanowire/ZnO film device with and without UV illumination. (b) PC spectra under different reverse biases. Good responses in the UV region are evident.

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/content/aip/journal/apl/98/4/10.1063/1.3551628
2011-01-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/4/10.1063/1.3551628
10.1063/1.3551628
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