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Schematic view of the photodetector device, which consists of ZnO thin film on c-sapphire substrate, vertically aligned ZnO nanowires, ITO contacts, and Ti/Au contacts.
(a) Top-view and (b) side-view SEM images of as-grown p-type ZnO nanowires. (c) High-resolution TEM image of a single nanowire. The lattice spacing between two atomic layers is measured to be 0.52 nm. (d) SAED pattern, indicating the single-crystalline characteristic of the nanowire.
(a) EBIC profile of the device. A clear peak can be seen in the area between the ZnO nanowires and ZnO film, representing the formation of junction. (b) curve of the ZnO nanowire FET under . Inset shows the SEM image of the NWFET. (c) curves of the ZnO nanowire FET recorded at different gate voltages.
(a) I-V characteristics of the ZnO nanowire/ZnO film device with and without UV illumination. (b) PC spectra under different reverse biases. Good responses in the UV region are evident.
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