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Enhanced annealing of implantation-induced defects in 4H-SiC by thermal oxidation
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10.1063/1.3531755
/content/aip/journal/apl/98/5/10.1063/1.3531755
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/5/10.1063/1.3531755

Figures

Image of FIG. 1.
FIG. 1.

Concentration vs depth profiles of the level at in n-type 4H-SiC epitaxial layers implanted with 4.3 MeV Si-ions to doses of (a) and (b) and subsequently annealed in and atmospheres. Both of the annealings were performed at for 3.5 h. The depth profiles were measured at a sample temperature of 289 K with a lock-in rate window of .

Image of FIG. 2.
FIG. 2.

Concentration vs depth profiles of in samples implanted with a dose of and then annealed in or atmosphere. Also shown is the difference between the two depth profiles normalized to the content of in the -annealed sample.

Image of FIG. 3.
FIG. 3.

Concentration vs depth profiles of in the implantation peak region vs ion dose for samples implanted with 4.3 MeV Si-ions and then annealed in or atmosphere. There is a linear dependence in both cases, indicating that is directly generated during the implantation. The error bars give an estimate of the measurement uncertainty.

Image of FIG. 4.
FIG. 4.

Comparison between experimental and simulated concentrations vs depth profiles of in 4H-SiC implanted with (4.3 MeV) and then annealed in atmosphere (, 3.5 h). The experimental profile obtained after annealing in atmosphere is also included and used for input for the simulations at .

Tables

Generic image for table
Table I.

An overview of the model parameters and their values.

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/content/aip/journal/apl/98/5/10.1063/1.3531755
2011-02-03
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced annealing of implantation-induced defects in 4H-SiC by thermal oxidation
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/5/10.1063/1.3531755
10.1063/1.3531755
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