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(a) The illustration of a layer structure with the GaSb/GaAs QD epiwafer and (b) the atomic force microscopy image of the GaSb/GaAs QD epiwafer.
The SEM image of a microdisk cavity with a diameter of . (a) Top view and (b) angle view.
(a) The PL spectrum from the GaSb/GaAs QD layer on a GaAs substrate with different incident pump powers at temperature of 150 K. (b) The measured PL peak energy (squares) and the fitting curve for PL peak energy with a cube-root dependence of the power density.
(a) The lasing spectrum from a microdisk laser at 150 K and its lasing wavelength is 968.2 nm. (b) The L-L curve, the linewidth (circles) of the laser, and its threshold behavior were observed at an incident power of 450 pJ/pulse. (c) The measured threshold power of the GaSb QD microdisk laser at different temperatures.
(a) The top view of mode profile for a microdisk cavity at 961 nm from the FEM simulation. (b) The cross-section view of the calculated profile around the edge of a microdisk cavity.
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