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Compact microdisk cavity laser with type-II GaSb/GaAs quantum dots
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) The illustration of a layer structure with the GaSb/GaAs QD epiwafer and (b) the atomic force microscopy image of the GaSb/GaAs QD epiwafer.

Image of FIG. 2.
FIG. 2.

The SEM image of a microdisk cavity with a diameter of . (a) Top view and (b) angle view.

Image of FIG. 3.
FIG. 3.

(a) The PL spectrum from the GaSb/GaAs QD layer on a GaAs substrate with different incident pump powers at temperature of 150 K. (b) The measured PL peak energy (squares) and the fitting curve for PL peak energy with a cube-root dependence of the power density.

Image of FIG. 4.
FIG. 4.

(a) The lasing spectrum from a microdisk laser at 150 K and its lasing wavelength is 968.2 nm. (b) The L-L curve, the linewidth (circles) of the laser, and its threshold behavior were observed at an incident power of 450 pJ/pulse. (c) The measured threshold power of the GaSb QD microdisk laser at different temperatures.

Image of FIG. 5.
FIG. 5.

(a) The top view of mode profile for a microdisk cavity at 961 nm from the FEM simulation. (b) The cross-section view of the calculated profile around the edge of a microdisk cavity.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Compact microdisk cavity laser with type-II GaSb/GaAs quantum dots