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(a) Schematic and XTEM image of a phase-transformed zone formed through a thin surface a-Si layer in the through-wafer sample structures. The polycrystalline structure of a zone of Si-III/Si-XII formed using a spherical indenter is clearly visible in the XTEM. (b) Conductive AFM scans of indents made using a Berkovich indenter tip. Fast unloading is used to form a zone of pressure-induced a-Si. Also shown is slow unloading, where the end phase is Si-III/Si-XII and appears as the bright region in the conductive AFM scan.
Summary of the resistive bar structures and results for measurements of Si-III/Si-XII and a-Si zones. Schematics (a) showing both the Si-III/Si-XII bar written across the a-Si strip (left figure) and the c-Si mesa structure into which the a-Si bars are written (right figure). I-V measurements (b) clearly show the low resistivity of the Si-III/Si-XII zone and high resistivity of the a-Si lines.
Summary of the electrical measurements made on the zones of Si-III/Si-XII and a-Si formed by nanoindentation. The conductivity of the Si-III/Si-XII zones increases with boron content. The nanoindentation-induced a-Si is electrically insulating.
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