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Photoluminescence (excitation at ) and excitation (emission at ) spectra of a p-InP epitaxial wafer and of the same wafer with various thicknesses of 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) capping layer. Inset: Energy levels of p-InP and PTCDA inferred from ultraviolet photoemission spectroscopy. Units of eV are applied to the numbers in the inset.
Current density-voltage characteristics of p-InP/PTCDA solar cells with PTCDA window layer thicknesses of , 1, 2, 4, and 8 nm. Inset: Measured (symbols) and fit (lines) dark characteristics of p-InP/PTCDA solar cells with , 3, and 30 nm.
External quantum efficiency (EQE) vs wavelength for p-InP/PTCDA solar cells with PTCDA layer thicknesses of (solid line), 3, (dash), and 10 nm (dot). The PTCDA absorption spectrum is shown as a reference. The EQE of devices with 24 nm thick bathocuproine (BCP) (dash dot) and 30 nm (dash dot dot) exciton blocking layers (EBLs) between PTCDA and ITO are also shown. Inset: Photoluminescence of PTCDA in the Quartz/PTCDA/exciton blocking layer (EBL)/ITO structures with no EBL (solid line), with 12 nm BCP (dash dot), and with 30 nm (dash dot dot).
Dark current fitting parameters.
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