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Nitrogenated amorphous InGaZnO thin film transistor
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View: Figures


Image of FIG. 1.
FIG. 1.

The X-ray photoelectron spectrometer (XPS) spectra of the nitrogenated amorphous IGZO (a-IGZO:N) with gas flow rates of 0, 0.5, and 1 SCCM (SCCM denotes cubic centimeter per minute at STP), respectively. The inset presents the composition of Ga Auger at 397.4 eV and the N1s of at 395.8 eV.

Image of FIG. 2.
FIG. 2.

(a) The transfer characteristics of a-IGZO:N TFTs with different nitrogen doping concentrations. The corresponding device parameters to the a-IGZO:N TFTs are shown in the inset, including threshold voltage , subthreshold swing (S.S), and carrier mobility . (b) The shifts of a-IGZO:N TFT devices staying at the ambient atmosphere for the time duration of 7 days. Each error bar includes five different measuring results for each TFT device.

Image of FIG. 3.
FIG. 3.

The electrical reliability of a-IGZO:N TFTs with different nitrogen doping concentrations under (a) the positive and (b) the negative gate bias stress. The gate bias stress conditions were 1 MV/cm for positive bias and −1 MV/cm for negative bias stress at room temperature for while source and drain electrodes were connected to the ground. The shifts of the gate bias stressed a-IGZO:N TFTs dramatically decrease with the increase of nitrogen incorporation during the a-IGZO film deposition.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitrogenated amorphous InGaZnO thin film transistor