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Stress control during thermal annealing of copper interconnects
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10.1063/1.3551627
/content/aip/journal/apl/98/5/10.1063/1.3551627
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/5/10.1063/1.3551627
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A new Cu metallization scheme consisting of (a) Cu plating, (b) deposition of TaN stress-control liner, (c) thermal anneal, and (d) planarization.

Image of FIG. 2.
FIG. 2.

(a) Blanket film stress determined by x-ray diffraction during heating for passivated and unpassivated Cu films. (b) Stress relaxation of passivated and unpassivated samples at a test temperature of .

Image of FIG. 3.
FIG. 3.

Measurements of line resistance. Wafers 1–3: type I. Wafers 4–6: type II. Wafers 7–9: type III.

Image of FIG. 4.
FIG. 4.

Scanning electron microscopy failure analysis results from an unpassivated sample post thermal anneal. Cross-section perpendicular to the Cu line indicating (a) delamination between Cu and sidewall Ta(N) liner, and (b) embedded voids.

Image of FIG. 5.
FIG. 5.

FIB cross-sectional images of Cu films in (a) type I wafer post anneal and (b) type III wafer post anneal.

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/content/aip/journal/apl/98/5/10.1063/1.3551627
2011-01-31
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stress control during thermal annealing of copper interconnects
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/5/10.1063/1.3551627
10.1063/1.3551627
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