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Vertical polymer phototransistor featuring photomultiplication due to base-field shielding
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/content/aip/journal/apl/98/5/10.1063/1.3552714
1.
1.R. D. Yang, T. Gredig, C. N. Colesniuc, J. Park, I. K. Schuller, W. C. Trogler, and A. C. Kummel, Appl. Phys. Lett. 90, 263506 (2007).
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7.The thicknesses of PVP, Al grid, , and P3HT are 200, 40, 50, and 350 nm, respectively. The opening diameter is 200 nm. The highest occupied molecular orbital and lowest unoccupied molecular orbital levels of P3HT are 5.2 and 3.0 eV. The work functions of emitter and collector are 5.2 and 4.3 eV. The hole mobility and electron mobility in P3HT are and .
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FIG. 1.

(a) Schematic illustration of the structure of P3HT or P3HT:PCBM-SCLT. (b) Transfer characteristics of a P3HT-SCLT in total darkness and under illumination.

Image of FIG. 2.

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FIG. 2.

(a) A simulated potential distribution at the central vertical channel. (b) The two-dimensional electron distribution of P3HT-SCLT with a photogeneration and a . Electron concentration is denoted by .

Image of FIG. 3.

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FIG. 3.

(a) Output characteristics of the P3HT:PCBM-SCLT. (b) Transfer characteristics of a P3HT:PCBM-SCLT in total darkness and under illumination.

Image of FIG. 4.

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FIG. 4.

(a) of planar diode of (diode-A), planar diode of (diode-B), and EC diode in P3HT:PCBM-SCLT plotted as a function of bias voltage. (b) The EQE of P3HT:PCBM-SCLT.

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/content/aip/journal/apl/98/5/10.1063/1.3552714
2011-02-04
2014-04-25

Abstract

We introduce a vertical polymerphototransistor with low operational voltage (−1.5 V). A blended polymer layer with both acceptor and donor materials was used as a channel material in the vertical space-charge-limited transistor. Under illumination, we obtained external quantum efficiency (EQE) as high as 360% at 620 nm. We propose the effects of base-field shielding as a means to explain high EQE. This proposition has been supported by two-dimensional simulation of the device.

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Scitation: Vertical polymer phototransistor featuring photomultiplication due to base-field shielding
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/5/10.1063/1.3552714
10.1063/1.3552714
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