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Vertical polymer phototransistor featuring photomultiplication due to base-field shielding
1.R. D. Yang, T. Gredig, C. N. Colesniuc, J. Park, I. K. Schuller, W. C. Trogler, and A. C. Kummel, Appl. Phys. Lett. 90, 263506 (2007).
7.The thicknesses of PVP, Al grid, , and P3HT are 200, 40, 50, and 350 nm, respectively. The opening diameter is 200 nm. The highest occupied molecular orbital and lowest unoccupied molecular orbital levels of P3HT are 5.2 and 3.0 eV. The work functions of emitter and collector are 5.2 and 4.3 eV. The hole mobility and electron mobility in P3HT are and .
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We introduce a vertical polymerphototransistor with low operational voltage (−1.5 V). A blended polymer layer with both acceptor and donor materials was used as a channel material in the vertical space-charge-limited transistor. Under illumination, we obtained external quantum efficiency (EQE) as high as 360% at 620 nm. We propose the effects of base-field shielding as a means to explain high EQE. This proposition has been supported by two-dimensional simulation of the device.
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