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Vertical polymer phototransistor featuring photomultiplication due to base-field shielding
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/content/aip/journal/apl/98/5/10.1063/1.3552714
2011-02-04
2014-09-02

Abstract

We introduce a vertical polymerphototransistor with low operational voltage (−1.5 V). A blended polymer layer with both acceptor and donor materials was used as a channel material in the vertical space-charge-limited transistor. Under illumination, we obtained external quantum efficiency (EQE) as high as 360% at 620 nm. We propose the effects of base-field shielding as a means to explain high EQE. This proposition has been supported by two-dimensional simulation of the device.

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vertical polymer phototransistor featuring photomultiplication due to base-field shielding
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/5/10.1063/1.3552714
10.1063/1.3552714
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