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Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor
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10.1063/1.3549180
/content/aip/journal/apl/98/6/10.1063/1.3549180
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/6/10.1063/1.3549180
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transfer characteristics after applying a negative gate bias of −20 V for 5000 s at room temperature (a) in ONO structure and (b) in NO structure. (c) Gate currents of NO and ONO structures measured with a gate bias of −20 V and grounded S/D at room temperature.

Image of FIG. 2.
FIG. 2.

(a) Simulated electric field distribution of ONO structure (left) and NO structure (right) with a gate bias of −20 V and grounded S/D along channel length direction by using SIVACO™ ATLAS. (b) Stress time dependence of shift at temperatures of 130 and 300 K in NO and ONO structures. (c) In-wafer distribution of shift with respect to stress time at 300 K in NO and ONO structures.

Image of FIG. 3.
FIG. 3.

Stress time dependence of shift under different stress temperatures (a) in gate insulator ONO and gate metal molybdenum, (b) in gate insulator NO and gate metal copper, and (c) in gate insulator NO and gate metal molybdenum. (d) shift with respect to stress time at 300 K. The measured shift is in agreement with the calculated shift by the stretched-exponential equation.

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/content/aip/journal/apl/98/6/10.1063/1.3549180
2011-02-08
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/6/10.1063/1.3549180
10.1063/1.3549180
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