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InN/InGaN multiple quantum wells emitting at grown by molecular beam epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

XRD scan and simulation of one sample with quantum wells; satellite peaks up to the second order are observed. The estimated Ga composition in the barriers is 17%. The well and barrier thicknesses are 3.0 and 9.0 nm, respectively. A low temperature cap layer was grown on top. The inset shows the scheme and nominal parameters of the samples grown.

Image of FIG. 2.
FIG. 2.

(a) Cross-sectional dark-field TEM image of the heterostructure (TD: threading dislocations). (b) SAED image revealing two different diffraction patterns: (circles) GaN and (squares) relaxed InGaN barriers and the compressively strained InN QWs.

Image of FIG. 3.
FIG. 3.

(a) PL spectrum of at low temperature (14 K). Two luminescence peaks are observed coming from the InN wells. (b) PL spectra of as a function of temperature.

Image of FIG. 4.
FIG. 4.

(a) PL main peak position as a function of temperature of a sample. (b) Arrhenius plot of the integrated intensity.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy